Electrical and Photoluminescence Properties of Mg<sup>+</sup> and C<sup>+</sup> Implanted Acceptors in InP.

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<jats:title>Abstract</jats:title><jats:p>Implantation of Mg<jats:sup>+</jats:sup> and C+ ions is carried out in bulk InP substrates using single or several energies up to 400 keV. The net carrier concentration profile at 300K is measured by capacitance-voltage (C-V) method. The ground and excited states binding energies of Mg and C acceptors are determined by low-temperature selective excitation of photoluminescence (PL). Additional sharp exciton-Iike emissions are detected after annealing of the samples. Their intensity is found to decrease with increasing Mg<jats:sup>+</jats:sup> or C<jats:sup>+</jats:sup> dose. Annealing-induced activation and/or formation of complex defect are the likely candidate mechanisms for the involved defect.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 163 1989-01-01

    Springer Science and Business Media LLC

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