Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications
説明
Fabrication process of HfSiON gate dielectrics by plasma oxidation of CVD Hf silicate followed by plasma nitridation was developed. Thanks to the high quality ultrathin interfacial layer formed by internal plasma oxidation, electron mobility of 240 cm/sup 2//Vs@0.8 MV/cm (85% of SiO/sub 2/) and hole mobility of 73 cm/sup 2//Vs@0.5 MV/cm (93% of SiON) were successfully achieved. The developed process will be promising for the production of low power CMOS devices in the near future.
収録刊行物
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- 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
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2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) 17-18, 2004-03-02
Japan Soc. Applied Phys