Atomie and Electron Structure of Diamond Grain boundaries in a Polycrystalline Film

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説明

<jats:title>Abstract</jats:title><jats:p>A polycrystalline diamond film was grown on the polished surface of silicon substrate in H<jats:sub>2</jats:sub>-CO-O<jats:sub>2</jats:sub> mixing gas. Atomic and electron structure of grain boundaries in the film was investigated by both high resolution electron microscopy and electron energy loss spectroscopy. CSL boundaries in the film showed characteristic feature in atomic structure; Σ 9 CSL boundary was parallel not to (221) plane but to (114) plane. A new line which correspond to π <jats:sub>*</jats:sub> state was found in addition to major σ <jats:sub>*</jats:sub> line in the EELS spectra of the boundary which contained three coordinate atoms. Observed π <jats:sub>*</jats:sub> line shows occurred change of a dangling bond (p<jats:sub>z</jats:sub> electron) to π state. No π <jats:sub>*</jats:sub> line appeared in the EELS spectra obtained from boundaries which contained no three coordinate atom such as (111) Σ 3 boundary.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 472 1997-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1870583642947091456
  • DOI
    10.1557/proc-472-93
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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