Room temperature Nb/Nb oxide-based single-electron transistors
説明
Room temperature operation of Nb/Nb oxide-based single-electron transistors (SETs) was successfully achieved and is reported in detail. First, the SETs were fabricated by a scanning probe microscope (SPM)-based anodic oxidation technique, and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two kinds of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.
収録刊行物
-
- International Electron Devices Meeting. IEDM Technical Digest
-
International Electron Devices Meeting. IEDM Technical Digest 175-178, 2002-11-22
IEEE