In-Situ SubStrate Temperature Measurement During a-Sin Plasma CVD from N<sub>2</sub> Rotational Temperature
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<jats:title>Abstract</jats:title><jats:p>Rotational temperature (Tr) of nitrogen molecule, equivalent to the gas temperature (Tg), was used for monitoring silicon nitride (SiN) surface temperature during rf glow discharge processing. SiN film characteristics such as deposition rate and etching rate for mixture of hydro-fluoric acid (HF) and ammonium fluoride : (NH<jats:sub>4</jats:sub>F) were dependent on Tr near the substrate. The Tr increased not only with substrate temperature setting (To) but also with gas mixing ratio of H<jats:sub>2</jats:sub>/(H<jats:sub>2</jats:sub>+N<jats:sub>2</jats:sub>) due to improvement of thermal conductance from heater to substrate in the process chamber.</jats:p>
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- MRS Proceedings
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MRS Proceedings 165 1989-01-01
Springer Science and Business Media LLC