Laser-induced electron emission from p-type silicon emitters
説明
We have studied the photoassisted electron emission from a p-type silicon field emitter array under illumination of laser lights with 633 nm and 405 nm wavelengths. The increase of the emission current under light illumination is proportional to the emission current in the dark. The significant influence of the polarization in photoassisted emission for each wavelength was not observed.
収録刊行物
-
- 2014 27th International Vacuum Nanoelectronics Conference (IVNC)
-
2014 27th International Vacuum Nanoelectronics Conference (IVNC) 196-197, 2014-07-01
IEEE