Hot electron cyclotron resonance in n-type InSb
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説明
Abstract A merit of electric field modulated cyclotron resonance is presented. Joint determination of resistivity and carrier distribution in the energy space yields a fair sucess in separating the mechanisms for the nonlinear transport behavior of n-type InSb at low temperatures.
収録刊行物
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- Solid State Communications
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Solid State Communications 11 815-817, 1972-09-01
Elsevier BV