Effect of oxidation ambient on phosphorus diffusion in SOI
説明
Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.
収録刊行物
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- 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)
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1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) 194-197, 2002-11-27
IEEE