Thermal annealing effects on the triboluminescence intensity of sputtered ZnS:Mn thin films

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ABSTRACT We have investigated the triboluminescence (TrL) intensities ofas-grown and thermally annealed ZnS thin films doped withmanganese on quartz substrates. The ZnS:Mn thin films were deposited by rf magnetron sputtering and thermally annealedin a reducing gas (5% H2/Ar ) at 500°C, 600°C, 700°C and 800°C. The crystallinity and the triboluminescence intensities ofthe films were greatly enhanced by postannealing up to 700°C, accompanied by an increase in the adherent strength of thefilm. An X-ray diffractometer and a Scratch Adhesion Tester were used to study the crystallinity and adhesion of the as-grown and annealed films respectively. Results based on crystallographic and acoustic emission data were used to explainthe failure mechanisms in the films during the triboluminescence measurement.Keywords; triboluminescence, crystallinity, adhesion, ZnS thin films 1. INTRODUCTION Triboluminescence (TrL) is the emission of light caused by the application of a mechanical energy to a solid. This

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詳細情報 詳細情報について

  • CRID
    1870865117490291200
  • DOI
    10.1117/12.401683
  • ISSN
    0277786X
  • データソース種別
    • OpenAIRE

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