<title>Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation</title>

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Photoluminescence properties of Er-doped nanocrystalline Si/ Si02 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding Si02. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 μm was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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