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GaN-based blue laser diodes with deeply etched high-reflectivity DBR mirrors
Description
A high mirror reflectivity of 62% is obtained for InGaN/GaN lasers using a deeply etched semiconductor/air DBR structure. The optimum design for the DBR mirrors with tilted sidewalls differs from the conventional /spl lambda//(4n) design.
Journal
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- CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671)
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CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) 1 340-340, 2004-07-08
IEEE
