Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

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<jats:p>Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm<jats:sup>3</jats:sup> are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 92 1987-01-01

    Springer Science and Business Media LLC

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