Self-assembled periodic nanostructures embedded in wide bandgap semiconductor
説明
Polarization-dependent periodic nanostructures inside GaP and β-Ga 2 O 3 crystals have been induced by the IR femtosecond double pulse irradiation. These nanostructures in semiconductor could be influenced by the transition type and the bandgap energy. Apart from the basic understanding of the formation mechanisms, such nanostructures in semiconductors will open the door to the innovative application of the self-contained thermoelectric devices.
収録刊行物
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- 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
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2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) 1-3, 2017-07-01
IEEE
