The enhanced binding energy for biexcitons in InAs quantum dots
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説明
<jats:p>We observed that the biexciton binding energy in InAs quantum rhombic disks (QRDs) is enhanced by twice compared with that for InAs quantum dots (QDs) so far reported around 1.24 μm nearby the telecommunication wavelength. The heterodyne-detected four-wave-mixing detected the exciton-biexciton quantum beat superposed on photon echo decay, giving the biexciton binding energy of 3.4 meV to 3 monolayer (ML) InAs QRDs and 4.1 meV to 4 ML InAs QRDs, respectively. The largest biexciton binding energy of 4.1 meV in InAs QDs is ascribed to increased electron-hole overlap in confined geometry with a minimized strain distribution.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 98 (6), 061905-, 2011-02
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1050282677518691712
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- NII書誌ID
- AA00543431
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- ISSN
- 10773118
- 00036951
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- HANDLE
- 2241/114022
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- KAKEN
- OpenAIRE
