Mechanisms of Stress Corrosion Cracking in Si: A Hybrid Quantum-Mechanical/Molecular-Dynamics Simulation

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説明

<jats:title>ABSTRACT</jats:title><jats:p>We investigate mechanisms of stress corrosion cracking in Si using a hybrid quantum-mechanical/molecular-dynamics simulation code developed recently for parallel computers. We perform the simulation for a cracked Si-model under tension (mode-I opening) with three H<jats:sub>2</jats:sub>O molecules around the crack front to investigate possible effects of both saturation of dangling bonds of Si with hydrogen atoms and environment molecules on the fracture initiation. Our results demonstrate existence of a path for an H<jats:sub>2</jats:sub>O molecule to react with Si-Si bonds at the crack front in contrast to a previous theoretical study based on the molecular orbital theory [W. Wong-Ng et al., Comp. Mater. Sci. <jats:bold>6</jats:bold>, 63 (1996)].</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 750 2002-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1870865117749411584
  • DOI
    10.1557/proc-750-y8.40
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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