Successful fabrication of GaInAsP ridge waveguide laser diode using hydrophilic bonded InP/Si substrate

説明

We have successfully fabricated 1.5 μm GaInAsP ridge waveguide laser diode on InP/Si substrate and obtained lasing emission. We have measured I-L-V characteristics and compared threshold current between InP/Si and InP substrate at several temperatures.

収録刊行物

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