Successful fabrication of GaInAsP ridge waveguide laser diode using hydrophilic bonded InP/Si substrate
説明
We have successfully fabricated 1.5 μm GaInAsP ridge waveguide laser diode on InP/Si substrate and obtained lasing emission. We have measured I-L-V characteristics and compared threshold current between InP/Si and InP substrate at several temperatures.
収録刊行物
-
- CLEO Pacific Rim Conference
-
CLEO Pacific Rim Conference W3A.117-, 2018-01-01
OSA
