Window-structure InGaALP visible light laser diodes by self-selective diffusion induced disordering
説明
We investigated the behavior of Zn diffusion in InGaAlP double heterostructures during a second MOCVD growth, and found that the behavior of Zn diffusion strongly depended on the presence of an n-GaAs capping layer. We de- signed a new process for InGaAlP window-structure InGaAlP laser diodes using this unique diffusion behavior and disorder- ing of a natural superlattice. A window structure realizing a high power operation has been successfully fabricated without any complicated process. A maximum output power above 80 mW has been obtained for CW operation, and 400 mW for pulsed operation.
収録刊行物
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- 12th IEEE International Conference on Semiconductor Laser
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12th IEEE International Conference on Semiconductor Laser 36-37, 1990-01-01
IEEE
