Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk

説明

The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.

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