Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors
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<jats:title>Abstract</jats:title><jats:p>Experimental works have been reviewed on poly-Si/poly-SiC<jats:sub>x</jats:sub> hetero TFTs aiming at extremely low off-current even under intense light illumination conditions with reasonable field-effect mobility. The results indicated that the hetero TFT having the stacked poly-Si/poly-SiC<jats:sub>x</jats:sub> layers is promising as a switching device in matrices</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 452 1996-01-01
Springer Science and Business Media LLC
