Molecular beam epitaxy of GaN on lattice-matched ZrB<sub>2</sub> substrates using low-temperature GaN and AlN nucleation layers
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説明
<jats:title>ABSTRACT</jats:title><jats:p>GaN epilayers have been grown by plasma-assisted molecular-beam epitaxy on ZrB<jats:sub>2</jats:sub> substrates with close in-plane lattice match. Growth processes utilizing both low-temperature GaN (LT-GaN) and AlN nucleation layers were investigated. The x-ray ω-scan widths for the optimized LT-GaN nucleation process were 400 and 750 arcsec for symmetric and asymmetric reflections, respectively. When using LT-GaN nucleation layers, the chemical incompatibility of ZrB<jats:sub>2</jats:sub> results in a high dislocation density despite the in-plane lattice match. The epilayer polarity was N-polar for LT-GaN nucleation layers under all conditions investigated. For AlN nucleation layers, Ga-polar epilayers were obtained under suitable conditions (Al-rich, lower nucleation temperatures) for nominal AlN thickness as low as 1 nm. From RHEED analysis it appears that a psuedomorphic Al wetting layer forms on the ZrB<jats:sub>2</jats:sub> surface, and that using AlN as the nucleation layer may offer promise for reducing the epilayer defect density.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 831 2004-01-01
Springer Science and Business Media LLC
