Retardation and Enhancement in Lateral Solid Phase Epitaxy of Si on SiO<sub>2</sub> by MeV Electron Beam Irradiation

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<jats:title>ABSTRACT</jats:title><jats:p>We have demonstrated the high energy (MeV) electron beam irradiation effects on lateral solid phase epitaxy (L-SPE) of Si-on-insulator (SOI). Thinned samples were set on a hot stage in a 2 MeV electron microscope and L-SPE growth under 2 MeV electron irradiation conditions was monitored in-situ by using the same microscope. L-SPE growth rate for the irradiation dose of 10<jats:sup>21</jats:sup> cm<jats:sup>−2</jats:sup> was enhanced by about 1.5 times greater than that under unirradiated condition. For electron beam irradiation doses higher than about 10<jats:sup>23</jats:sup> cm<jats:sup>−2</jats:sup>, L-SPE growth was suppressed. Displacement of Si atoms, contamination effect and ionization effect are discussed as causes for the growth rate retardation and enhancement of L-SPE by electron beam irradiation.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 279 1992-01-01

    Springer Science and Business Media LLC

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