A 16M SRAM with improved characteristics using DRAM technology
説明
A 16Mbit low power SRAM with 0.98mum2 cells using 0.15mum DRAM and TFT technology has been developed. A new type memory cell technology achieves enough low power, low cost and high soft error immunity without large investment. By these improved characteristics some customers at industrial machines and handy devices decided to use this new type of SRAM by compatibility with SRAM
収録刊行物
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- 2005 IEEE Asian Solid-State Circuits Conference
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2005 IEEE Asian Solid-State Circuits Conference 17-20, 2005-11-01
IEEE
