Carrier scattering caused by antiparallel coupled magnetic domains in Co/Pd multilayers
説明
Magnetoresistance (MR) characteristics of Co/Pd multilayers were investigated to attain current in-plane (CIP) type of spin valve devices using films with perpendicular magnetic anisotropy. Co/Pd multilayers were prepared by facing targets sputtering apparatus. The background pressure was kept below 5.0 /spl times/ 10/sup -7/ Torr. [Co(0.2 nm)/Pd(0.6 nm)]/sub n/ multilayer were deposited as high coercivity layer at Ar gas pressure P/sub Ar/ of 10 mTorr and [Co(0.6 nm)/Pd(4.6 nm)]/sub n/ multilayer were deposited as low coercivity layer at Ar gas pressure P/sub Ar/ of 5 mTorr. The periodic numbers of Co/Pd bilayers were set at 18 and 6 for [Co(0.2 nm)/Pd(0.6 nm)]/sub n/ and [Co(0.6 nm)/Pd(4.6 nm)]/sub n/ multilayers.
収録刊行物
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- INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.
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INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. 21-22, 2005-01-01
IEEE