A highly reliable metal-to-metal antifuse for high-speed field programmable gate arrays
説明
This paper describes a novel metal-to-metal antifuse technology for field programmable gate arrays which achieves very high performance and reliability while maintaining full CMOS compatibility. Plasma-CVD SiN with Si/N=1 and Al covered with TiN are used as an antifuse dielectric and electrodes, respectively. This structure allows a desirable characteristics for high-speed FPGAs with off-state reliability of 1.7/spl times/10/sup 5/ years. >
収録刊行物
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- Proceedings of IEEE International Electron Devices Meeting
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Proceedings of IEEE International Electron Devices Meeting 31-34, 2002-12-30
IEEE