A practical small-signal equivalent circuit model for RF-MOSFETs valid up to the cut-off frequency
説明
The non-quasistatic contribution to the Y-parameters is shown to be much smaller than usually expected. This is especially true for advanced pocket-implant MOSFET technologies being developed for RF devices. Therefore, a simple and practical equivalent-circuit model valid up to the cut-off frequency becomes possible. The small interdependence of the different model elements allows an explicit and sequential extraction of the individual element values.
収録刊行物
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- 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
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2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) 3 2121-2124, 2003-06-25
IEEE