Growth of self-standing GaN substrates
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説明
Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 7602 760202-, 2010-02-11
SPIE