A novel lateral n-i-p-i structure heterojunction quantum wire transistor
説明
Reports fabrication of a high performance (AlGa)As-GaAs heterojunction quantum wire transistors in lateral n-i-p-i configuration by utilizing the selective doping mechanism of amphoteric silicon dopant on patterned [311]A GaAs substrates for the first time.
収録刊行物
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- 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393)
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1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393) 72-73, 2003-01-20
IEEE