A Study of Elemental Interdiffusion in GaN/Si Wafer Grown by Metalorganic Vapor Phase Epitaxy

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<jats:title>ABSTRACT</jats:title><jats:p>Secondary ion mass spectrometry (SIMS) study shows that a short-time interdiffusion process occurs at the interface of buffer/Si in the GaN/Si wafers grown by metalorganic vapor phase epitaxy (MOVPE). Increasing the growth temperature of the buffer layer from 1150°C to 1210°C reduces the dropping rate of Al concentration in the silicon substrate from ∼20nm/decade to ∼30nm/decade near the interface. The impact of the interdiffusion on the band structure is investigated by photocurrent spectroscopy measurement. The experimental results indicate that different build-in electric fields are formed in the GaN/n-Si(111) and GaN/p-Si(111) devices as the consequence of the MOVPE growth.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 798 2003-01-01

    Springer Science and Business Media LLC

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