Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices

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<jats:title>ABSTRACT</jats:title><jats:p>ZnSe, ZnTe and ZnSe-ZnTe strained-layer superlattices (SLS's) have been successfully grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). The ideal ALE growth, i.e., one monolayer per cycle of opening and closing the shutters of the constituent elements, was obtained for ZnSe in the substrate temperature range of 250-350° C. However, for ZnTe, precise control of the Te beam intensity is needed to obtain the ALE growth. Optical properties of the (ZnSe)l-(ZnTe) 1 SLS were evaluated by photoluminesence. ZnSe films were also grown by ALE using metalorganic molecular beam epitaxy (MOMBE-ALE). Diethylzinc (DEZn), diethylsulfur (DES) and diethylselenium (DESe) were used as source gases for Zn, S and Se, respectively. The ALE growth of ZnSe was achieved at substrate temperature between 250 and 300° C which is about 150° C lower than that for the conventional MOMBE.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 161 1989-01-01

    Springer Science and Business Media LLC

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