The Dependence Of Gaas Schottky Diode Noise On Dry Etching Damage
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Abstract The noise of GaAs Schottky diode caused by dry etching damage has been studied. The number of trapsnear the Pt /GaAs interface increases with the dam-age, and this greatly increases flicker noise. These experimental results can be explained by a theoreti- cal calculation.Introduction Millimeter wave and submillimeter wave measure- ments are very useful for plasma diagnostics(I ), radio astronomy and molecular spectroscopy. The GaAs Schottky diode has advantages of high sensitivity,high speed responsibility and room temperature opera- tion for those measurements. We have been studying and fabricating GaAs Schottky diodes for submilli- meter wave detectors and mixers(2). The noise charac- teristics of a Schottky diode are important for sen-sitive detectors and mixers. Here the noise depen- dence on dry etching damage in fabrication process is reported. The dependence of the noise and othercharacteristics on dry etchingOur GaAs Schottky diode is a honeycomb type for millimeter and submillimeter wave detectors. The
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 1039 213-, 1988-11-18
SPIE