A study of a MSW device using a low-loss Bi,Ga substituted YIG film having a proper growth induced anisotropy magnetic field characterized by ultra-low frequency-temperature dependencies
説明
A YIG film having a small frequency-temperature dependence with a low /spl Delta/H has been investigated both theoretically and experimentally. It is found that the frequency-temperature characteristics of a low-loss Bi,Ga substituted YIG film epitaxially grown on a (111) oriented GGG substrate with a proper growth-induced anisotropy magnetic field are better than those of a YIG sphere. A MSFVW chip resonator made from this film is also demonstrated. >
収録刊行物
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- 1993 IEEE International Frequency Control Symposium
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1993 IEEE International Frequency Control Symposium 722-727, 2002-12-30
IEEE