Role of base layer in CVD Si/sub 3/N/sub 4/ stack gate dielectrics on the process controllability and reliability in direct tunneling regime
説明
The roles of the base layer in Si/sub 3/N/sub 4//SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as /spl sim/1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.
収録刊行物
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- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
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International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) 323-326, 2003-01-22
IEEE