Depth Profiles of Thermal Donors in Czochralski-Grown N-Type Silicon
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<jats:title>ABSTRACT</jats:title><jats:p>Depth profiles of thermal donors introduced by heat treatment at 450°C in Czochralski-grown n-type silicon have been studied through capacitance-voltage measurements of Au Schottky diodes in the oxygen concentration range 8.1×10<jats:sup>17</jats:sup> to 15.3×10<jats:sup>17</jats:sup> cm<jats:sup>3</jats:sup> Thermal donor concentrations increase with depth and their depth profiles are fitted to the error function equation. The obtained diffusivity decreases with annealing time and is higher for samples with the lower initial oxygen concentrations. Combining with the infrared absorption measurements, it is found that the curves of the diffusivity as a function of loss of interstitial oxygen coincide with each other. The similar tendency is observed on the oxygen diffusivity evaluated with secondary ion mass spectrometry. These results indicate that the oxygen diffusivity at 450°C is related to both the outdiffusion and clustering of oxygen. Depth profiles of thermal donors formed at 650°C are also reported.</jats:p>
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- MRS Proceedings
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MRS Proceedings 262 1992-01-01
Springer Science and Business Media LLC