Reduction of V<inf>oc</inf> induced by the electron-phonon scattering in GaAs and CH <inf>3</inf> NH <inf>3</inf> PbI <inf>3</inf>
説明
This work highlights the intrinsic modification of the electronic density-of-states due to electron-phonon scattering. Using a quantum model we show that, by broadening the density-of-states in the bandgap, the scattering changes the absorption/emission ratio and then some photovoltaic parameters like V oc . For the high mobility GaAs material we obtain a moderate V oc reduction of 4mV. In the highly polar CH 3 NH 3 PbI 3 perovskite material, even through the mobility is low, the broadening in the density-of-states is limited by the small phonon energy and then the V oc reduction remains inferior to 41mV.
収録刊行物
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- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) 1796-1799, 2018-06-01
IEEE