Simulator for Dynamic Ion Beam Mixing
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説明
<jats:title>ABSTRACT</jats:title><jats:p>Dynamic ion beam mixing (simultaneous deposition and ion beam irradiation) was simulated for the first time. Standard Monte Carlo (MC) programs do not account for the steady change of target geometry caused by the layer growth during the process. Therefore a time-step strategy was realized by integrating a MC simulator in a system together with a geometry update module. A comparison between simulation results and XPS and TEM measurements shows reasonable agreement between simulation and measurements.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 279 1992-01-01
Springer Science and Business Media LLC