Cu-Cu Bonding Challenges with ‘i-ACF’ for Advanced 3D Integration
説明
In this work, we demonstrated Cu-Cu bonding with an inorganic anisotropic conductive film called ‘i-ACF’ composed of an anodized aluminum oxide (AAO) film with a huge number of 60-nm-diameter Cu nano-pillars (CNPs). Lower-temperature/pressure Cu-Cu bonding conditions below 250°C/50 MPa were achieved. When we employed a daisy chain consisting of 5,096 Cu electrodes with a size of 28 μm, the resulting resistances of each joint were found to be 0.1 Ω. The key process was Cu-Cu bonding through the ‘i-ACF’ under a reducing atmosphere, which inhibited the oxidation of the CNPs. Consequently, the bonding temperature was able to be lowered down to 200°C.
収録刊行物
-
- 2019 International 3D Systems Integration Conference (3DIC)
-
2019 International 3D Systems Integration Conference (3DIC) 1-4, 2019-10-01
IEEE