Formation of Silicon and Silicon-Based Semiconductor Materials via Photoinduced Reaction Using Femtosecond Laser

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<jats:title>ABSTRACT</jats:title><jats:p>We have succeeded in silicon (Si) precipitation inside a glass/aluminum (Al) sandwich structure via photoinduced reaction using femtosecond (fs) laser irradiation. The sandwich structure was fabricated by direct bonding below 573 K. Raman spectra at the photomodified area indicated that Si crystals formed at the interface between the glass and metallic Al after the laser irradiation. In addition, the particle size of the precipitated Si could be changed by changing the pulse energy of the laser. Furthermore, we have also focused the laser pulses on Fe-Si film to trigger crystallization and phase transformation of Fe<jats:sub>x</jats:sub>Si<jats:sub>y</jats:sub> at the interface between Fe/Si multilayer and glass.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 1288 2011-01-01

    Springer Science and Business Media LLC

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