Effect of Ge in Cl<sub>2</sub> Plasma for Reactive Ion Etching of GaN
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<jats:title>Abstract</jats:title><jats:p>We investigated the effect of Ge and Si in Cl<jats:sub>2</jats:sub> plasma on reactive ion etching (RIE) of GaN. The etched surfaces of GaN were smooth, and high etch rates of 0.63 m/min and 0.41 m m/min were obtained using a Ge plate and a Si plate, respectively. A rough surface was formed for the quartz plate without the Ge plate or Si plate. Optical emission spectroscopy revealed optical emissions related to GeCl<jats:sub>x</jats:sub><jats:sup>+</jats:sup>ions in Cl<jats:sub>2</jats:sub> plasma with the Ge plate, to SiCl<jats:sub>x</jats:sub><jats:sup>+</jats:sup> ions with the Si plate and to Cl<jats:sup>+</jats:sup> ions without the Ge or the Si plate. It is considered that the GeCl<jats:sub>x</jats:sub><jats:sup>+</jats:sup>ions and SiCl<jats:sub>x</jats:sub><jats:sup>+</jats:sup> ions for RIE of GaN plays an important role in obtaining a smooth etched surface of GaN, and that the high-energy Cl+ ion severely damages the GaN surface.</jats:p>
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- MRS Proceedings
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MRS Proceedings 693 2001-01-01
Springer Science and Business Media LLC