Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam
この論文をさがす
説明
<jats:title>ABSTRACT</jats:title><jats:p>MOS device interfaces are investigated using carrier injection and monoenergetic positron beam experiments. Carrier injection reveals that the holes injected into gate S1O<jats:sub>2</jats:sub> film seem to be the main cause of the interface state generation and the dielectric breakdown of thin-gate SiO<jats:sub>2</jats:sub>. Positron annihilation experiments show that the positron diffuse along the electric field in the Si and the gate SiO<jats:sub>2</jats:sub> and are trapped in the interface region before annihilation. The obtained value of 5 at the SiO<jats:sub>2</jats:sub>/Si interface was 0.500 ±0.003. The behavior of holes in the SiO<jats:sub>2</jats:sub> and SiO<jats:sub>2</jats:sub>/Si interface are simulated using the monoenergetic positron annihilation technique.</jats:p>
収録刊行物
-
- MRS Proceedings
-
MRS Proceedings 262 1992-01-01
Springer Science and Business Media LLC