Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

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説明

<jats:title>ABSTRACT</jats:title><jats:p>MOS device interfaces are investigated using carrier injection and monoenergetic positron beam experiments. Carrier injection reveals that the holes injected into gate S1O<jats:sub>2</jats:sub> film seem to be the main cause of the interface state generation and the dielectric breakdown of thin-gate SiO<jats:sub>2</jats:sub>. Positron annihilation experiments show that the positron diffuse along the electric field in the Si and the gate SiO<jats:sub>2</jats:sub> and are trapped in the interface region before annihilation. The obtained value of 5 at the SiO<jats:sub>2</jats:sub>/Si interface was 0.500 ±0.003. The behavior of holes in the SiO<jats:sub>2</jats:sub> and SiO<jats:sub>2</jats:sub>/Si interface are simulated using the monoenergetic positron annihilation technique.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 262 1992-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1871146592994447232
  • DOI
    10.1557/proc-262-313
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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