A completely self‐aligned TFT‐array process using five masks

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説明

<jats:p><jats:bold>Abstract—</jats:bold> In this paper we present a five‐mask process to make completely self‐aligned inverted‐staggered amorphous‐silicon TFTs. The mask‐count reduction from a conventional seven‐mask process was accomplished by simultaneous patterning of pixel electrodes and signal lines and by the use of back‐side laser annealing. A mobility value close to 1 cm<jats:sup>2</jats:sup>/V‐s was obtained for TFTs fabricated using this process.</jats:p>

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詳細情報 詳細情報について

  • CRID
    1871146593049846400
  • DOI
    10.1889/1.1984997
  • ISSN
    19383657
    10710922
  • データソース種別
    • OpenAIRE

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