RTN impact on data-retention failure/recovery in scaled (∼1Ynm) TLC NAND flash memories
説明
RTN (Random Telegraph Noise) impact on data-retention failure/recovery mechanism has been investigated in scaled (∼1Ynm) 2-dimensional (2D) TLC (3bits/cell) NAND flash memories. The data-retention failure is caused by the electron de-trapping from the tunnel oxide in memory cells, which have 5∼8 times higher population of large threshold voltage shift by RTN (ΔV TH_RTN ) than normal memory cells. Also, it is found that failure memory cells are selectively recovered by a repeated read operation due to re-trapped electrons to trap site. This phenomenon is observed as large positive ΔV th_rtn . In addition, the scaling trend of RTN is evaluated beyond 1Ynm cell. It is shown that ΔV th_rtn is increased along with 1/(WL)0·84, which has much severer scaling projection than previous reports [1][2]·.
収録刊行物
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- 2017 IEEE International Reliability Physics Symposium (IRPS)
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2017 IEEE International Reliability Physics Symposium (IRPS) PM-13.1, 2017-04-01
IEEE
