Magnetic anisotropy and magnetization reversal of (Ga,Mn)As dot-array
この論文をさがす
説明
<jats:p>The present article describes the magnetic anisotropy and magnetization reversal of (Ga,Mn)As dot-arrays with 1 μm and 200 nm in diameter fabricated by electron-beam lithography and Ar ion etching. The magnetization reversal mode is due to the magnetization rotation in the dot-arrays fabricated in the present study; they probably have a single-domain structure. The microfabrication of the (Ga,Mn)As dot-arrays modifies magnetic anisotropy through the relaxation of strain in the dots as previously reported; the 200-nm-dot-array exhibits magnetically isotropic features. The cubic anisotropy constant of the 200-nm-dot-array is estimated to be reduced by approximately a tenth of that of the (Ga,Mn)As epitaxial film by the calculation from the measured M-H loops based on a phenomenological model related to magnetic energy.</jats:p>
収録刊行物
-
- Journal of Applied Physics
-
Journal of Applied Physics 109 2011-04-01
AIP Publishing