Structural Studies of Nickel Films and their Interface with Sapphire Substrates
この論文をさがす
説明
<jats:title>ABSTRACT</jats:title><jats:p>The perfection of epitaxial nickel films grown on the (00.ℓ) or basal plane of heated sapphire (A1<jats:sub>2</jats:sub>0<jats:sub>3</jats:sub>) single crystals were studied with X-ray diffraction techniques. Nickel films approximately 700 Å thick formed by vapor deposition increased in perfection as the temperature of the sapphire approached 1400°C. Although the nickel atom distances are 10.3% smaller than those of the closed-packed direction in sapphire, the strain was accommodated at the interface rather than being distributed through the thickness of the nickel film. Diffuse rods of X-ray scattering which are associated with diffraction from the interface gave information about the nature of the roughness at the interface.</jats:p>
収録刊行物
-
- MRS Proceedings
-
MRS Proceedings 77 1986-01-01
Springer Science and Business Media LLC