Dependence of the E<sub>2</sub> and A<sub>1</sub>(LO) modes on InN fraction in InGaN epilayers

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<jats:title>ABSTRACT</jats:title><jats:p>The behavior of the E<jats:sub>2</jats:sub> and A<jats:sub>1</jats:sub>(LO) optical phonons in In<jats:sub><jats:italic>x</jats:italic></jats:sub> Ga<jats:sub>1-<jats:italic>x</jats:italic></jats:sub> N has been analyzed by Raman scattering over the whole composition range. The frequencies of the E<jats:sub>2</jats:sub> and A<jats:sub>1</jats:sub>(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of ≈ 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for both E<jats:sub>2</jats:sub> and A<jats:sub>1</jats:sub>(LO) modes of InGaN.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 831 2004-01-01

    Springer Science and Business Media LLC

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詳細情報 詳細情報について

  • CRID
    1871146593117916288
  • DOI
    10.1557/proc-831-e3.22
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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