Strain evolution and phonons in AlN/GaN superlattices

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<jats:title>ABSTRACT</jats:title><jats:p>AlN/GaN superlattices (SLs) with different periods grown on GaN buffer layers were studied by infrared spectroscopic ellipsometry (IRSE), Raman scattering (RS) and highresolution reciprocal space mapping (RSM). The lattice parameters and the degree of strain in the GaN buffer and the SL constituents were determined. Phonon modes originating from the buffer layer and the SL sublayers were identified and their frequency shifts were correlated with the strain state of the films.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 798 2003-01-01

    Springer Science and Business Media LLC

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