Observation of SrTiO3 in-gap states by depletion mode field effect

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<jats:p>We have fabricated SrTiO3 (100) single crystal field-effect transistors with epitaxial and amorphous DyScO3 gate insulator layers. The devices showed an on-off ratio of 107 with a field-effect mobility of over 100cm2∕Vs at 50K. The residual oxygen vacancy concentration in the transistor channel was adjusted so that the off-state current was high at room temperature but dropped sharply upon cooling. The temperature dependence of the channel current under a carrier-depleting gate bias was used to show that oxygen vacancies form an in-gap impurity state at about 0.24eV below the SrTiO3 mobility edge.</jats:p>

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Details 詳細情報について

  • CRID
    1871146593161215104
  • DOI
    10.1063/1.2837627
  • ISSN
    10773118
    00036951
  • Data Source
    • OpenAIRE

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