Growth Temperature and Oxygen Ambient Dependency of SrTiO<sub>3</sub>/Si(100) InterfaceStructures
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<jats:title>Abstract</jats:title><jats:p>A systematical growth temperature and oxygen ambient dependency of SrTiO<jats:sub>3</jats:sub>/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO<jats:sub>3</jats:sub> layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO<jats:sub>3</jats:sub> layer is strongly growth temperature and also oxygen partial pressure dependent.</jats:p>
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- MRS Proceedings
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MRS Proceedings 700 2001-01-01
Springer Science and Business Media LLC