Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

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<jats:title>ABSTRACT</jats:title><jats:p>GaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 242 1992-01-01

    Springer Science and Business Media LLC

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