Numerical Analysis of Electro-Thermal Phenomena in Metal by Boltzmann Transport Equation for Electron
説明
<jats:p>By the development of micro-fabrication technology, much smaller-size electronic devices will be soon available. In such a smaller device, a non-equilibrium state might appear in metal and/or semiconductor. In this case, it is difficult to estimate the device performance by the macroscopic transport equations that assume quasi-equilibrium distribution. We are developing a numerical simulation based on Boltzmann transport equation (BTE), which can analyze thermal and electric phenomena even when the state is far from equilibrium. In this study, we show a new formulation of BTE for free electron in metal and its calculation result: the thermoelectric power obtained agreed with that of experimental value: the heat flux derived by the non-equilibrium distribution was two-orders small than that estimated by thermal conductivity.</jats:p>
収録刊行物
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- Advances in Electronic Packaging, Parts A, B, and C
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Advances in Electronic Packaging, Parts A, B, and C 2103-2107, 2005-01-01
ASMEDC