Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode

DOI

Description

The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the MOSFET and SBD has a large effect on the conduction power loss. This parasitic inductance creates a current that is shared by the two devices for a certain period and increases the conduction power loss. If conventional devices are used for under 1 MHz switching, the advantage of the low on-resistance MOSFET will almost be lost. To reduce the conduction loss for 10 MHz switching, the parasitic inductance must be a subnanohenley.

Journal

Details 詳細情報について

  • CRID
    1871146593256662016
  • DOI
    10.1109/63.704135
  • ISSN
    19410107
    08858993
  • Data Source
    • OpenAIRE

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